K4H560438D-GC SAMSUNG [Samsung semiconductor], K4H560438D-GC Datasheet - Page 14

• Manufacturer Part Number: K4H560438D-GC
• Description: DDR 256Mb
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4H560438D
AC Operating Test Conditions
Input/Output Capacitance
(VDD=2.5, VDDQ=2.5V, TA= 25°C, f=1MHz)
Input reference voltage for Clock
Input signal maximum peak swing
Input signal minimum slew rate (for imput only)
Input slew rate (I/O pins)
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
IH
/V
IL
Parameter
Parameter
)
Output
Output Load Circuit (SSTL_2)
Z0=50Ω
C
LOAD
=30pF
- 14 -
V
Symbol
tt
COUT
=0.5*V
CIN1
CIN2
CIN3
R
DDQ
T
V
=50Ω
REF
See Load Circuit
V
=0.5*V
Min
REF
1.5
1.5
3.5
3.5
+0.31/V
0.5 * V
Value
V
1.5
0.5
0.5
DDQ
V
REF
tt
DDQ
REF
Max
(V
3.5
3.5
5.5
5.5
-0.31
DD
=2.5V, V
Delta Cap(max)
Rev. 2.2 Mar. ’03
DDQ
0.25
0.5
0.5
DDR SDRAM
=2.5V, T
V/ns
V/ns
Unit
V
V
V
V
V
A
= 0 to 70°C)
Note
Unit
pF
pF
pF
pF