K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 41

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
Hold Slew Rate
V
V
V
V
V
V
Rising Signal
DDQ
IH
IH
REF
IL
IL
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
CK
CK
V
SS
=
dc to V
dc to V
region
region
tangent line [ V
Figure 16 - IIIustration of tangent line for tIH
REF
REF
∆TR
tIS
tangent
REF
line
(DC) - V
Hold Slew Rate
Falling Signal
41 of 47
tIH
IL
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tIS
tangent
∆TF
line
IH
tIH
(DC)min - V
∆TF
nominal
line
Rev. 1.4 December 2008
REF
(DC)]
DDR2 SDRAM