K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 31

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
DQS
Note1
Note : DQS signal must be monotonic between V
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC)max
(AC)max
Figure 8 - IIIustration of tangent line for tDS (single-ended DQS)
(AC)min
(DC)min
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
V
(AC)min
(DC)min
nominal
SS
(DC)
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF
line
(DC) - V
Setup Slew Rate
Rising Signal
tDH
31 of 47
IL
(AC)max]
IL
nominal
(DC)max and V
line
=
∆TR
tangent line[V
tDS
IH
tangent
(DC)min.
line
∆TR
IH
(AC)min - V
tDH
V
REF
region
to ac
Rev. 1.4 December 2008
REF
(DC)]
DDR2 SDRAM