K4T1G044QM-ZCCC SAMSUNG [Samsung semiconductor], K4T1G044QM-ZCCC Datasheet - Page 20

• Manufacturer Part Number: K4T1G044QM-ZCCC
• Description: 1Gb M-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

1Gb M-die DDR2 SDRAM
Mode register set
command cycle time
Write postamble
Write preamble
Address and control
input hold time
Address and control
input setup time
Read preamble
Read postamble
Active to active
command period for
1KB page size
products
Active to active
command period for
2KB page size
products
Four Activate Window
for 1KB page size
products
Four Activate Window
for 2KB page size
products
CAS to CAS command
delay
Write recovery time
Auto precharge write
recovery + precharge
time
Internal write to read
command delay
Internal read to
precharge command
delay
Exit self refresh to a
non-read command
Exit self refresh to a
read command
Exit precharge power
down to any non-read
command
Exit active power down
to read command
Parameter
Symbol
tMRD
tWPST
tWPRE
tIH(base)
tIS(base)
tRPRE
tRPST
tRRD
tRRD
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
WR+tR
tRFC +
min
37.5
375
250
200
0.4
0.35
0.9
0.4
7.5
7.5
7.5
10
50
10
15
2
2
P
2
DDR2-533
2
max
0.6
1.1
0.6
x
x
x
x
x
x
x
x
x
x
x
WR+tR
tRFC +
Page 20 of 29
min
37.5
0.35
475
350
200
0.4
0.9
0.4
7.5
7.5
10
50
15
10
10
P
2
2
2
DDR2-400
2
max
0.6
1.1
0.6
x
x
x
x
x
x
x
x
x
x
x
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
ps
ns
ns
ns
ns
ns
ns
ns
ns
Notes
14,16,
14,16,
18,23
18,22
19
28
28
12
12
23
33
11
9
Rev.1.1 Jan. 2005
DDR2 SDRAM