K4T1G044QM-ZCCC SAMSUNG [Samsung semiconductor], K4T1G044QM-ZCCC Datasheet - Page 18

• Manufacturer Part Number: K4T1G044QM-ZCCC
• Description: 1Gb M-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

1Gb M-die DDR2 SDRAM
Input/Output capacitance
Electrical Characteristics & AC Timing for DDR2-533/400
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command
time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tRCD
tRP
tRC
tRAS
(0 °C < T
Speed
Parameter
CASE
Parameter
< 95 °C; V
3.75
min
DDQ
15
15
55
40
5
DDR2-533(D5)
4 - 4 - 4
tRFC
tREFI
= 1.8V + 0.1V; V
70000
max
85 °C < T
0 °C ≤ T
8
8
Symbol
Page 18 of 29
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
CASE
CASE
DD
= 1.8V + 0.1V)
≤ 85°C
min
≤ 95°C
15
15
55
40
5
5
DDR2-400(CC)
3 - 3 - 3
Min
1.0
1.0
2.5
x
x
x
DDR2-400
256Mb
7.8
3.9
75
70000
max
8
8
Max
0.25
0.25
2.0
2.0
4.0
0.5
512Mb
105
7.8
3.9
Min
1.0
1.0
2.5
Units
x
x
x
DDR2-533
ns
ns
ns
ns
ns
ns
127.5
1Gb
7.8
3.9
Max
0.25
0.25
2.0
2.0
4.0
0.5
Rev.1.1 Jan. 2005
DDR2 SDRAM
2Gb
195
7.8
3.9
Units
pF
pF
pF
pF
pF
pF
327.5
4Gb
7.8
3.9
Units
ns
µs
µs