M36L0T7050B2ZAQT NUMONYX [Numonyx B.V], M36L0T7050B2ZAQT Datasheet - Page 20
![no-image](/images/no-image-200.jpg)
M36L0T7050B2ZAQT
Manufacturer Part Number
M36L0T7050B2ZAQT
Description
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.M36L0T7050B2ZAQT.pdf
(22 pages)
Part numbering
7
20/22
Part numbering
Table 7.
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact the Numonyx Sales Office nearest to you.
Example:
Device Type
M36 = Multi-Chip Package (Flash + RAM)
Flash 1 Architecture
L = Multilevel, Multiple Bank, Burst mode
Flash 2 Architecture
0 = No Die
Operating Voltage
T = V
Flash 1 Density
7 = 128 Mbit
Flash 2 Density
0 = No Die
RAM 1 Density
5 = 32 Mbit
RAM 0 Density
0 = No Die
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
Product Version
2 = 90nm Flash technology and Multi-Level design, 85ns speed; 0.13µm RAM, 65ns
speed
Package
ZAQ = Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = ECOPACK® package, standard packing
F = ECOPACK® package, tape and reel packing
DDF
= 1.7 to 1.95V; V
Ordering information scheme
DDQ
= V
CCP
= 2.7 to 3.1V
M36 L 0 T
7 0 5 0 T 2
M36L0T7050T2, M36L0T7050B2
ZAQ F