M36L0T7050B2ZAQT NUMONYX [Numonyx B.V], M36L0T7050B2ZAQT Datasheet - Page 13

• Manufacturer Part Number: M36L0T7050B2ZAQT
• Description: 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
• Manufacturer: NUMONYX [Numonyx B.V]

M36L0T7050T2, M36L0T7050B2
3
Functional description
The PSRAM and Flash memory components have separate power supplies but share the
same grounds. They are distinguished by three Chip Enable inputs: E
memory and E1
Recommended operating conditions do not allow more than one device to be active at a
time. The most common example is simultaneous read operations in the Flash memory and
the PSRAM which would result in a data bus contention. Therefore it is recommended to put
the other device in the high impedance state when reading the selected device.
Figure 3.
A20-A22
A0-A19
Functional block diagram
P
and E2
P
for the PSRAM.
WP
E1
G
W
E2
UB
LB
RP
W
G
P
E
K
L
P
P
P
P
P
F
F
F
F
F
F
F
V
DDF
V
CCP
128 Mbit
Memory
PSRAM
16 Mbit
Flash
V
V
PPF
SS
V
DDQ
Functional description
F
for the Flash
DQ0-DQ15
WAIT
AI10965
F
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