TH50VSF2581AASB TOSHIBA [Toshiba Semiconductor], TH50VSF2581AASB Datasheet - Page 43
![no-image](/images/no-image-200.jpg)
TH50VSF2581AASB
Manufacturer Part Number
TH50VSF2581AASB
Description
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TH50VSF2581AASB.pdf
(50 pages)
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Part Number:
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Notes:
TIMING FOR SWITCHING BETWEEN FLASH AND SRAM MODES
(1)
(2)
(3)
(4)
(5)
(6)
If
remain High-Impedance.
If
remain High-Impedance.
If OE is High during a Write cycle, the outputs will remain High-Impedance.
Since I/O pins may be in Output state at this point, do not attempt to apply input signals to them.
D
WE remains High during a Read cycle.
OUT
CE2S
CE
CE
CE
CEF
1
S
1
1
6 stops toggling when the last command has been completed.
S
S
goes Low (or CE2S goes High) at the same time as or after WE goes Low, the outputs will
goes High (or CE2S goes Low) at the same time as or before WE goes High, the outputs will
t
CCR
TH50VSF2580/2581AASB
2001-10-26 43/50
t
CCR
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