TH50VSF2581AASB TOSHIBA [Toshiba Semiconductor], TH50VSF2581AASB Datasheet - Page 27

• Manufacturer Part Number: TH50VSF2581AASB
• Description: SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

COMMON FLASH MEMORY INTERFACE (CFI)
the Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input
the Reset command.
CFI CODE TABLE
The TH50VSF2520/2581AASB conforms to the CFI specifications. To read information from the device, input
ADDRESS A6~A0
1AH
1BH
1CH
1DH
1EH
2AH
2BH
10H
12H
13H
14H
15H
16H
17H
18H
19H
1FH
20H
21H
22H
23H
24H
25H
26H
27H
28H
29H
11H
DATA DQ15~DQ0
000AH
0051H
0052H
0059H
0002H
0000H
0040H
0000H
0000H
0000H
0000H
0000H
0027H
0036H
0000H
0000H
0004H
0000H
0000H
0005H
0000H
0004H
0000H
0016H
0002H
0000H
0000H
0000H
ASCII string “QRY”
Primary OEM command set
Address for primary extended table
Alternate OEM command set
Address for alternate OEM extended table
V
V
V
V
Typical time-out per single byte/word write (2
Typical time-out for minimum size buffer write (2
Typical time-out per individual block erase (2
Typical time-out for full chip erase (2
Maximum time-out for byte/word write (2
Maximum time-out for buffer write (2
Maximum time-out per individual block erase (2
Maximum time-out for full chip erase (2
Device Size (2
Flash device interface description
Maximum number of bytes in multi-byte write (2
DD
DD
PP
PP
2: AMD/FJ standard type
0: none exists
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
2: ×8/×16
(min) voltage
(max) voltage
(min) (Write/Erase)
(max) (Write/Erase)
N
byte)
TH50VSF2580/2581AASB
DESCRIPTION
N
N
ms)
times typical)
N
N
times typical)
times typical)
N
N
ms)
µs)
2001-10-26 27/50
N
N
N
)
times typical)
µs)