S71GL256NB0 SPANSION [SPANSION], S71GL256NB0 Datasheet - Page 126

• Manufacturer Part Number: S71GL256NB0
• Description: Stacked Multi-chip Product (MCP)
• Manufacturer: SPANSION [SPANSION]

Low Power ICC Characteristics (32M)
Address Patterns for PAR (A3= 0, A4=1) (16M)
Address Patterns for RMS (A3 = 1, A4 = 1) (16M)
Low Power ICC Characteristics (16M)
126
PAR Mode Standby Current I
RMS Mode Standby Current I
Deep Sleep Current
A2
A2
PAR Mode Standby Current
RMS Mode Standby Current
Deep Sleep Current
0
0
x
1
1
0
0
1
1
A1
A1
1
1
0
1
1
1
1
1
1
A0
A0
1
0
0
1
0
1
0
1
0
Item
One-quarter of die
One-half of die
Full die
One-quarter of die
One-half of die
One-quarter of die
One-half of die
Item
One-quarter of die
One-half of die
Active Section
Active Section
I
PAR
RMSSB
ZZ
Symbol
I
I
I
PAR
RMSSB
ZZ
Symbol
Chip in ZZ mode, t
A d v a n c e
Chip Disabled, t
Chip Disabled, t
Chip in ZZ# mode, t
Chip Disabled, t
Chip Disabled, t
V
V
V
IN
IN
IN
pSRAM Type 1
V
V
V
= V
= V
= V
IN
IN
IN
00000h - 0FFFFh
00000h - 7FFFFh
00000h - FFFFFh
C0000h - FFFFh
80000h - 1FFFFFh
C0000h - FFFFFh
80000h - FFFFFh
00000h - 0FFFFh
00000h - 7FFFFh
Test
= V
= V
= V
CC
CC
CC
Test
CC
CC
CC
or 0V,
or 0V,
or 0V,
A
A
= 85
= 85
or 0V,
or 0V,
or 0V,
A
I n f o r m a t i o n
= 85
A
A
= 85
= 85
Address Space
Address Space
A
o
o
= 85
C
C
o
C
o
o
C
C
o
C
1/4 Array
1/2 Array
4Mb Device
8Mb Device
1/4 Array
1/2 Array
8Mb Device
16Mb Device
Array Partition
Array Partition
pSRAM_Type01_12_A1 August 30, 2004
256Kb x 16
256Kb x 16
256Kb x 16
512Kb x 16
256Kb x 16
512Kb x 16
512Kb x 16
512Kb x 16
1Mb x 16
Typ
Typ
Size
Size
Max
Max
65
80
65
80
10
75
90
75
90
10
Density
Density
16Mb
4Mb
8Mb
4Mb
8Mb
4Mb
8Mb
4Mb
8Mb
Unit
Unit
µA
µA
µA
µA
µA
µA
µA
µA