S71GL064A08 SPANSION [SPANSION], S71GL064A08 Datasheet - Page 76

• Manufacturer Part Number: S71GL064A08
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

Erase And Programming Performance
Notes:
1.
2.
3.
4.
5.
6.
7.
74
Parameter
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time (Notes 3, 5)
Total Accelerated Effective Write Buffer Program Time
(Notes 4, 5)
Chip Program Time
Typical program and erase times assume the following conditions: 25°C, V
Under worst case conditions of 90
Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).
Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).
Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
System-level overhead is the time required to execute the command sequence(s) for the program command. See
information on command definitions.
°
C; Worst case V
S29GL064A
S29GL064A
CC
A d v a n c e
, 100,000 cycles.
S71GL064A based MCPs
Typ (Note 1)
240
200
0.5
I n f o r m a t i o n
64
63
CC
= 3.0V, 10,000 cycles; checkerboard data pattern.
(Note 2)
Max
128
3.5
Unit
sec
sec
µs
µs
S71GL064A_00_A2 February 8, 2005
Table 10
Excludes system
prior to erasure
level overhead
programming
Excludes 00h
Comments
(Note 6)
(Note 7)
for further