AM29SL400C SPANSION [SPANSION], AM29SL400C Datasheet - Page 40

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AM29SL400C

Manufacturer Part Number
AM29SL400C
Description
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
Latchup Characteristics
Includes all pins except V
TSOP Pin and BGA Package Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
Data Retention
38
Minimum Pattern Data Retention Time
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
CC
Parameter Symbol
typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 5 on page 18
Current
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
for further information on command definitions.
CC
Parameter
. Test conditions: V
Description
Word Mode
Byte Mode
Parameter Description
Control Pin Capacitance
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
A d v a n c e
CC
Typ (Note
= 1.8 V, 1,000,000 cycles.
CC
3.5
1)
38
10
12
2
5
= 1.8 V, one pin at a time.
I n f o r m a t i o n
Max (Note 2)
V
300
360
V
V
15
40
30
OUT
Test Conditions
IN
IN
°
C, 2.0 V V
= 0
= 0
= 0
Test Setup
150°C
125°C
–100 mA
CC
–1.0 V
–0.5 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
, 1,000,000 cycles. Additionally, programming
Min
Unit
µs
µs
s
s
s
s
TSOP
TSOP
TSOP
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Min
10
20
Typ
4.2
8.5
5.4
7.5
3.9
6
Comments
V
+100 mA
CC
Max
11.0 V
7.5
5.0
6.5
4.7
12
Max
9
+ 0.5 V
March 3, 2005
Years
Years
Unit
Unit
pF
pF
pF
pF
pF
pF

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