AM29PDLI27H SPANSION [SPANSION], AM29PDLI27H Datasheet - Page 3

• Manufacturer Part Number: AM29PDLI27H
• Description: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

Am29PDL127H
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write
Flash Memory with Enhanced VersatileIO
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
128 Mbit Page Mode device
— Page size of 8 words: Fast page read access from random
Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and program
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
— Zero latency switching from write to read operations
FlexBank Architecture
— 4 separate banks, with up to two simultaneous operations
— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank B: 48 Mbit (32 Kw x 96)
— Bank C: 48 Mbit (32 Kw x 96)
— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
Enhanced VersatileI/O
— Output voltage generated and input voltages tolerated on all
— V
SecSi
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 0.13 µm process technology
20-year data retention at 125°C
Minimum 1 million erase cycle guarantee per sector
High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
Power consumption (typical values at 10 MHz)
— 55 mA active read current
— 25 mA program/erase current
— 1 µA typical standby mode current
ADVANCE INFORMATION
locations within the page
operations for battery-powered applications
executing erase/program functions in another bank
per device
control inputs and I/Os is determined by the voltage on the
V
IO
IO
TM
options at 1.8 V and 3 V I/O
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
pin
(Secured Silicon) Sector region
TM
(V
IO
) Control
TM
SOFTWARE FEATURES
HARDWARE FEATURES
Control
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
WP#/ ACC (Write Protect/Acceleration) input
— At V
— At V
— At V
Persistent Sector Protection
— A command sector protection method to lock combinations
— Sectors can be locked and unlocked in-system at V
Password Sector Protection
— A sophisticated sector protection method to lock
Package options
— 64-ball Fortified BGA
— 80-ball Fine-pitch BGA
— Multi Chip Packages (MCP)
host software to easily reconfigure for different Flash devices
operations in other sectors of same bank
program command sequences
cycle completion
word sectors.
setting
of individual sectors and sector groups to prevent program or
erase operations within that sector
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
IL
IH
HH
, hardware level protection for the first and last two 4K
, allows removal of sector protection
, provides accelerated programming in a factory
Publication# 26864 Rev: A Amendment/+4
Issue Date: June 30, 2003
CC
level