AM29PDL128G70 SPANSION [SPANSION], AM29PDL128G70 Datasheet - Page 65

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AM29PDL128G70

Manufacturer Part Number
AM29PDL128G70
Description
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
Manufacturer
SPANSION [SPANSION]
Datasheet
AC CHARACTERISTICS
64
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
Addresses
RESET#
Figure 25. Alternate CE# Controlled Write (Erase/Program) Operation Timings
RY/BY#
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
P R E L I M I N A R Y
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
DH
Am29PDL128G
t
AH
OUT
PD for program
30 for sector erase
10 for chip erase
is the data written to the device.
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
July 29, 2002

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