HY27UG088GDM HYNIX [Hynix Semiconductor], HY27UG088GDM Datasheet - Page 47

no-image

HY27UG088GDM

Manufacturer Part Number
HY27UG088GDM
Description
8Gbit (1Gx8bit) NAND Flash
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet
HY27UG088G(5/D)M Series
8Gbit (1Gx8bit) NAND Flash
5. APPENDIX : Extra Features
5.1 Addressing for program operation
Within a block, the pages must be programmed consecutively from LSB (least significant bit) page of the block to MSB
(most significant bit) page of the block. Random address programming is prohibited. See Fig. 34.
5.2 Stacked Devices Access
A small logic inside the devices allows the possibility to stack up to 2 devices in a single package without changing the
(1)
pinout of the memory. To do this the internal address register can store up to 30
addresses(512Mbyte addressing
field) and basing on the 2 MSB pattern each device inside the package can decide if remain active (1 over 4 ) or “hang
up” the connection entering the Stand-By.
Rev. 0.6 / Dec. 2006
47

Related parts for HY27UG088GDM