HY27UG088GDM HYNIX [Hynix Semiconductor], HY27UG088GDM Datasheet - Page 22

• Manufacturer Part Number: HY27UG088GDM
• Description: 8Gbit (1Gx8bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
Rev. 0.6 / Dec. 2006
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0 - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 8: DC and Operating Characteristics
Symbol
(R/B)
I
I
I
I
I
V
V
V
I
V
I
I
CC1
CC2
CC3
CC4
CC5
LO
OL
OH
OL
LI
IH
IL
Table 9: AC Conditions
V
V
OUT
IN=
(max)
(max)
CE=V
=0 to Vcc
0 to Vcc
Test Conditions
CE=Vcc-0.2,
I
WP=0V/Vcc
WP=0V/Vcc
I
OH
V
t
OL
CE=V
RC
IL
OL
=-400uA
=2.1mA
, I
=30ns
=0.4V
-
-
-
-
OUT
IH
=0mA
Single & 2CE
Single & 2CE
,
Dual
Dual
8Gbit (1Gx8bit) NAND Flash
HY27UG088G(5/D)M Series
1 TTLGATE and CL=100pF
1 TTL GATE and CL=50pF
Vccx0.8
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
-
-
0V to Vcc
3.3Volt
Value
Vcc/2
5ns
3.3Volt
Typ
15
15
15
20
10
-
-
-
-
-
-
-
-
Vcc+0.3
Vccx0.2
± 20
± 10
± 20
± 10
Max
100
0.4
30
30
30
1
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
uA
uA
V
V
V
V
22