HY27UG088GDM HYNIX [Hynix Semiconductor], HY27UG088GDM Datasheet - Page 23

• Manufacturer Part Number: HY27UG088GDM
• Description: 8Gbit (1Gx8bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 0.6 / Dec. 2006
Input / Output
Capacitance
Input Capacitance
Program Time
Dummy Busy Time for Cache Program
Dummy Busy Time for Cache Read
Number of partial Program Cycles in the same page
Block Erase Time
Item
Symbol
C
C
I/O
IN
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Table 11: Program / Erase Characteristics
Parameter
Condition
V
V
Test
IN
IL
=0V
=0V
Min
-
-
HY27UG088G5M-T(P)
Spare Array
Main Array
20
20
8Gbit (1Gx8bit) NAND Flash
Symbol
HY27UG088G(5/D)M Series
t
t
t
t
NOP
NOP
PROG
CBSY
RBSY
BERS
Max
HY27UG088GDM-UP
Min
-
-
-
-
-
-
Typ
200
15
15
3
5
2
-
-
Max
700
700
4
4
3
-
Cycles
Cycles
Unit
Unit
ms
pF
pF
us
us
us
23