GS74108AGJ-10 GSI [GSI Technology], GS74108AGJ-10 Datasheet - Page 7

• Manufacturer Part Number: GS74108AGJ-10
• Description: 512K x 8 4Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

Write Cycle
* These parameters are sampled and are not 100% tested.
Rev: 1.07 1/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
Data Out
WE
Data In
Address
CE
OE
Write Cycle 1: WE control
t
AS
Symbol
tWHZ
tWLZ
tWR1
7/13
tWC
tCW
tDW
tWR
tAW
tWP
tDH
tAS
*
*
t
WHZ
t
AW
Min
5.5
5.5
5.5
t
—
t
CW
8
4
0
0
0
0
3
WC
-8
t
WP
H
Max
3.5
IGH IMPEDANCE
—
—
—
—
—
—
—
—
—
—
t
DW
D
ATA VALID
Min
10
—
7
7
5
0
7
0
0
0
3
t
WLZ
t
DH
-10
t
WR
Max
—
—
—
—
—
—
—
—
—
—
4
© 2001, Giga Semiconductor, Inc.
Min
12
—
8
8
6
0
8
0
0
0
3
GS74108ATP/J/X
-12
Max
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns