GS74108AGJ-10 GSI [GSI Technology], GS74108AGJ-10 Datasheet - Page 4

• Manufacturer Part Number: GS74108AGJ-10
• Description: 512K x 8 4Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

Capacitance
Notes:
1.
2.
DC I/O Pin Characteristics
Power Supply Currents
Rev: 1.07 1/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output High Voltage
Output Low Voltage
Parameter
Operating
Standby
Standby
Output Leakage
Current
Current
Current
Supply
Input Leakage
Tested at T
These parameters are sampled and are not 100% tested.
Parameter
Output Capacitance
Input Capacitance
Current
Current
Parameter
A
= 25°C, f = 1 MHz
Symbol
I
I
I
SB1
SB2
DD
Symbol
≥ V
V
V
I
I
LO
OH
IL
OL
Test Conditions
CE ≥ V
Symbol
DD
All other inputs
Min. cycle time
All other inputs
Min. cycle time
All other inputs
≥ V or ≤ V
≥ V or ≤V
I
C
OUT
- 0.2V or ≤ 0.2V
C
CE ≤ V
CE ≥ V
OUT
IN
IH
IH
= 0 mA
DD
- 0.2V
IH
IL
IL
Test Conditions
IL
V
V
Output High Z
OUT
I = –4 mA
I = +4 mA
IN
OH
LO
Test Condition
= 0 to V
= 0 to V
V
V = 0 V
OUT
120 mA
IN
30 mA
4/13
8 ns
DD
= 0 V
DD
0 to 70°C
95 mA
25 mA
10 mA
10 ns
– 1 uA
–1 uA
Min
2.4
—
Max
5
7
85 mA
22 mA
12 ns
Unit
pF
pF
130 mA
Max
0.4 V
1 uA
1 uA
40 mA
8 ns
—
© 2001, Giga Semiconductor, Inc.
–40 to 85°C
105 mA
GS74108ATP/J/X
35 mA
20 mA
10 ns
95 mA
32 mA
12 ns