K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 45

• Manufacturer Part Number: K9F1208Q0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Data Protection & Power-up sequence
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
cuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for program/erase provides
additional software protection.
WP
WE
V
CC
Figure 24. AC Waveforms for Power Transition
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
IL
during power-up and power-down. A recovery time of minimum 10 s is required before internal cir-
10 s
High
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
44
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V