K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 42
K9F1208Q0B
Manufacturer Part Number
K9F1208Q0B
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208Q0B.pdf
(45 pages)
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K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code (76h), Reserved(A5h), Multi plane oper-
ation code(C0h) respectively. A5h must be don’ t-cared. C0h means that device supports Multi Plane operation. The command regis-
ter remains in Read ID mode until further commands are issued to it. Figure 21 shows the operation sequence.
Figure 21. Read ID Operation 1
CLE
CE
WE
ALE
RE
I/O
0
~
7
90h
Address. 1cycle
00h
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
t
WHR
t
AR
t
CEA
t
REA
K9F1208Q0A
K9F1208U0A
K9F1216Q0A
K9F1216U0A
41
Maker code
Device
ECh
Device code
Device
Code
Device Code
XX46h
XX56h
36h
76h
FLASH MEMORY
A5h
Multi-Plane code
C0h
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