K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 21

• Manufacturer Part Number: K9F1208Q0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte 1264word page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.
Figure 7. Program Operation with CE don’ t-care.
CLE
CE
WE
ALE
I/O
CE
WE
Figure 8. Read Operation with CE don’ t-care.
CLE
ALE
R/B
I/O
CE
WE
RE
X
X
t
CS
00h
80h
Start Add.(4Cycle)
Start Add.(4Cycle)
t
WP
On K9F1208U0A-Y,P or K9F1208U0A-V,F
CE must be held
low during tR
t
CH
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
t
R
Data Input
20
I/O
CE
RE
X
CE don’ t-care
t
CE don’ t-care
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
10h