K4S640832D Samsung semiconductor, K4S640832D Datasheet - Page 7

• Manufacturer Part Number: K4S640832D
• Description: 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

AC CHARACTERISTICS
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Notes :
K4S640832D
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Rise time specification based on 0pF + 50 Ohms to V
2. Fall time specification based on 0pF + 50 Ohms to V
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
trh
tfh
tfh
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
SAC
t
t
t
t
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
Measure in linear
region : 1.2V ~1.8V
Measure in linear
region : 1.2V ~1.8V
Measure in linear
region : 1.2V ~1.8V
Measure in linear
region : 1.2V ~1.8V
Condition
Min
7.5
2.7
2.5
2.5
1.5
0.8
SS
1
-
-
.
- 75
1000
Max
5.4
5.4
-
-
DD
SS
Min
, use these values to design to.
, use these values to design to.
8
3
3
3
2
1
1
-
-
- 80
1.37
1.30
Min
2.8
2.0
1000
Max
6
6
-
-
Min
10
10
3
3
3
3
2
1
1
- 1H
Typ
3.9
2.9
1000
Max
6
6
6
6
Min
10
12
3
3
3
3
2
1
1
- 1L
4.37
Max
3.8
5.6
5.0
1000
Max
6
7
6
7
Rev. 0.0 May 1999
CMOS SDRAM
Min
3.5
3.5
2.5
1.5
10
13
3
3
1
Volts/ns
Volts/ns
Volts/ns
Volts/ns
- 10
Unit
1000
Max
7
7
7
7
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,2
1,2
3
3
1,2
1
2
3
3
3
3
2