K4S640832D Samsung semiconductor, K4S640832D Datasheet - Page 5

• Manufacturer Part Number: K4S640832D
• Description: 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
K4S640832D
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S640832D-TC**
4. K4S640832D-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK
PS CKE & CLK
N
N
P
P
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
t
= 2CLKs
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
(max), t
(max), t
Test Condition
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
V
V
IH
V
V
IH
IH
/V
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ)
=
=
C
L
- 75 - 80 - 1H - 1L -10
115 110
135 130 125 125 125
75
75
Version
Rev. 0.0 May 1999
400
15
25
15
70
95
1
1
6
3
3
1
CMOS SDRAM
70
95
70
95
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
uA
1
1
2
3
4