K4S640832D Samsung semiconductor, K4S640832D Datasheet - Page 4

• Manufacturer Part Number: K4S640832D
• Description: 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
ABSOLUTE MAXIMUM RATINGS
Notes :
Notes :
CAPACITANCE
K4S640832D
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Parameter
7
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
Parameter
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
.
A
V
DD
Symbol
= 23 C, f = 1MHz, V
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
C
C
C
V
V
C
ADD
OUT
Symbol
DD
CLK
IN
IN
T
-0.3
Min
-10
3.0
2.0
2.4
, V
I
P
, V
STG
OS
-
REF
D
OUT
DDQ
SS
=1.4V 200 mV)
= 0V, T
3ns.
3ns.
A
Min
2.5
2.5
2.5
4.0
Typ
= 0 to 70 C)
3.3
3.0
0
-
-
-
V
DD
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
Max
-
4.0
5.0
5.0
6.5
+0.3
Value
50
1
Rev. 0.0 May 1999
Unit
uA
V
V
V
V
V
CMOS SDRAM
Unit
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
W
Note
V
V
C
= -2mA
= 2mA
1
2
3
Note
1
2
2
3