2SK3150S Hitachi Semiconductor, 2SK3150S Datasheet - Page 5

• Manufacturer Part Number: 2SK3150S
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

500
200
100
200
160
120
10
20
50
80
40
5
2
1
0.1
0
I
V
D
V
Reverse Drain Current
DS
DD
= 15 A
Dynamic Input Characteristics
0.3
Body–Drain Diode Reverse
20
= 100 V
Gate Charge
50 V
25 V
Recovery Time
1
V
40
DD
di / dt = 50 A / µs
V
GS
= 100 V
3
= 0, Ta = 25°C
60
50 V
25 V
Qg (nc)
V
GS
10 30
I
DR
80
(A)
100
50
20
16
12
8
4
0
10000
1000
5000
2000
1000
200
100
500
100
500
200
50
20
10
10
50
20
0.1 0.2
0
V
f = 1 MHz
Drain to Source Voltage V
GS
10
Switching Characteristics
2SK3150(L),2SK3150(S)
Drain to Source Voltage
Typical Capacitance vs.
= 0
Drain Current
r t
0.5
V
PW = 5 µs, duty < 1%
t
20
GS
d(on)
1
= 10 V, V
t f
t
d(off)
2
30
I
D
50
DD
Ciss
(A)
Coss
Crss
40
DS
= 30 V
10
(V)
20
50
5