2SK3150S Hitachi Semiconductor, 2SK3150S Datasheet - Page 4

• Manufacturer Part Number: 2SK3150S
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3150(L),2SK3150(S)
4
250
200
150
100
2.5
2.0
1.5
1.0
0.5
–40
50
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
GS
Case Temperature
4
0
Gate to Source Voltage
= 4 V
vs. Temperature
10 V
40
8
15 A
12
80
5,10 A
I
D
T
Pulse Test
c
= 15 A
V
5,10 A
120
16
GS
10 A
(°C)
5 A
15 A
(V)
160
20
500
200
100
0.5
50
20
10
50
20
10
Static Drain to Source on State Resistance
5
2
1
0.1
1
Pulse Test
Forward Transfer Admittance vs.
0.3
2
Tc = –25 °C
Drain Current I
Drain Current
vs. Drain Current
V
1
GS
Drain Current
5
= 4 V
10
3
20
I
10
D
75 °C
V
Pulse Test
D
10 V
DS
(A)
(A)
= 10 V
30
50
25 °C
100
100