2SK3150S Hitachi Semiconductor, 2SK3150S Datasheet - Page 2

• Manufacturer Part Number: 2SK3150S
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3150(L),2SK3150(S)
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
2
1. PW
2. Value at Tc = 25 C
3. Value at Tch = 25 C, Rg
4. Pulse test
10 s, duty cycle
Symbol Min
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
1%
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
50
|
Symbol
V
V
I
I
I
I
E
Pch
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
Note3
Note3
Note2
100
—
—
1.0
—
—
8.5
—
—
—
—
—
—
—
—
—
Note1
20
Typ
900
400
—
—
—
—
—
45
65
15
210
15
120
200
150
0.9
90
Max
—
—
10
2.5
60
85
—
—
—
—
—
—
—
—
—
—
Ratings
100
20
60
20
20
40
50
150
–55 to +150
10
20
Unit
V
V
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1 MHz
I
R
I
I
diF/ dt = 50A/ s
D
G
D
D
D
D
D
F
F
GS
DS
DS
GS
L
= 20 A, V
= 20 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 10 A, V
= 10 A, V
= 10 A, V
= 10 A, V
= 3
= 16 V, V
= 100 V, V
= 10 V
= 0
Unit
V
V
A
A
A
A
mJ
W
C
C
GS
GS
GS
GS
DS
GS
DS
GS
= 0
= 0
= 10 V
= 10 V
= 4 V
= 10 V
DS
GS
= 10 V
DS
= 0
= 0
= 0
= 0
Note4
Note4
Note4