2SK3150S Hitachi Semiconductor, 2SK3150S Datasheet - Page 3

• Manufacturer Part Number: 2SK3150S
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
80
60
40
20
20
16
12
8
4
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
2
6 V
50
10 V
4 V
4
100
3.5 V
6
V
GS
Tc (°C)
Pulse Test
150
V
DS
=2.5 V
8
3 V
(V)
200
10
0.05
500
100
0.3
0.1
30
10
20
16
12
3
1
8
4
0
0.5
Operation in
this area is
limited by R
Ta = 25 °C
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
1
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
Tc = 75°C
1
2
= 10 V
2SK3150(L),2SK3150(S)
5
DS(on)
2
10 20
3
25°C
50
–25°C
V
V
100
GS
DS
4
200
(V)
(V)
500
5
3