M40SZ100 ST Microelectronics, M40SZ100 Datasheet - Page 7

• Manufacturer Part Number: M40SZ100
• Description: 5V or 3V NVRAM SUPERVISOR FOR LPSRAM
• Manufacturer: ST Microelectronics

Table 5. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
I
OUT1
I
I
V
I
V
Sym
V
CCDR
I
OUT2
V
V
LO
V
V
I
V
LI
V
OHB
PFD
CC
BAT
PFI
OH
OL
SO
IH
(3)
IL
(4)
2. Measured with V
3. RSTIN internally pulled-up to V
4. Outputs deselected.
5. External SRAM must match SUPERVISOR chip V
6. For rechargeable back-up, V
7. For PFO pin (CMOS).
8. Chip Enable output (E
9. For RST & BL pins (Open Drain).
(5)
duce battery life.
Supply Current
Data Retention Mode
Current
Input Leakage
Current
Input Leakage
Current (PFI)
Output Leakage
Current
V
(Active)
V
(Battery Back-up)
Battery Voltage
Input High Voltage
Input Low Voltage
Output High
Voltage
V
up
Output Low Voltage
Output Low Voltage
(open drain)
Power-fail Deselect
Voltage
PFI Input Threshold
PFI Hysteresis
Battery Back-up
Switchover Voltage
OUT
OUT
OH
(8)
Battery Back-
Parameter
Current
Current
(2)
(7)
OUT
(9)
and E
CON
) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will re-
CON
BAT
V
Test Condition
V
CC
0V
open.
OUT
I
0V
OUT
(max) may be considered V
OUT2
I
Outputs open
V
V
OH
I
through 100k resistor.
I
OL
PFI Rising
OL
CC
CC
V
> V
> V
= –1.0mA
= 3.0mA
V
= 10mA
OUT
= –1.0µA
= 5V(Y)
= 3V(V)
IN
BAT
CC
A
V
– 0.3
= –40 to 85°C; V
– 0.3
V
CC
CC
(1)
CC
specification (3V or 5V).
0.7V
1.225
–0.3
4.20
Min
–25
2.5
2.4
2.5
CC
CC
CC
M40SZ100Y
– 0.5V.
1.250
= 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
4.40
Typ
3.0
2.9
2.5
50
20
2
V
0.3V
CC
1.275
3.5
Max
4.50
200
175
100
3.5
0.4
0.4
±1
25
±1
70
1
+ 0.3 0.7V
(6)
CC
M40SZ100Y, M40SZ100W
1.225
–0.3
2.55
Min
–25
2.5
2.4
2.5
CC
M40SZ100W
1.250
2.60
Typ
3.0
2.9
2.5
50
20
2
V
0.3V
CC
1.275
3.5
Max
2.70
200
100
100
0.5
3.5
0.4
0.4
±1
25
±1
70
+ 0.3
(6)
CC
Unit
mA
mA
mV
µA
µA
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
7/19