PA2423G-EV SiGe Semiconductor Inc., PA2423G-EV Datasheet - Page 5

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PA2423G-EV

Manufacturer Part Number
PA2423G-EV
Description
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Manufacturer
SiGe Semiconductor Inc.
Datasheet
Gold Bump Bare Die – Bottom View
This drawing shows the gold bump bare die when viewed from the bottom of the die (without gold bumps).
This view and pintout orientation should be used for flip chip mounting – top surface of die (with gold bumps)
is inverted to make contact with PCB.
DOC # 05PDS003 Rev 5
(X=0,Y=0)
(X=0,Y=0)
142µm
142µm
1
1
±10 µ m
±10 µ m
100
100
100
100
45
45
o
o
±0 µ m
±0 µ m
±0 µ m
±0 µ m
12
12
2
2
60±0 µ m
60±0 µ m
60±0 µ m
60±0 µ m
100±0 µ m
100±0 µ m
11
11
3
3
07/26/2001
960µm ± 20µm
960µm ± 20µm
60±0 µ m
60±0 µ m
60±0 µ m
60±0 µ m
2.4 GHz Bluetooth Class 1 Power Amplifier IC
460±0 µ m
460±0 µ m
10
10
4
4
60±0 µ m
60±0 µ m
60±0 µ m
60±0 µ m
100
100
100
100
9
9
5
5
±0 µ m
±0 µ m
±0 µ m
±0 µ m
60±0 µ m
60±0 µ m
60±0 µ m
60±0 µ m
Preliminary Information
8
8
6
6
7
7
65µm±10µm
65µm±10µm
PA2423G
Page 5

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