PA2423 SiGe Semiconductor Inc., PA2423 Datasheet
PA2423
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PA2423 Summary of contents
Page 1
... An on-chip ramping circuit provides the turn- on/off switching of amplifier output with less than 3dB overshoot, specification 1.1. The PA2423MB operates at 3.3V DC. At typical output power level (+22.7 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the Shipping PA2423MB – and its exposed-die-pad package, Method soldered to the system PCB – ...
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... PA Output and Stage2 collector supply voltage, external output matching network 8 OUT/V CC2 with DC blocking is required Die Pad GND Heatslug Die Pad is ground DOC# 05PDS001 Rev 9 2.4 GHz Bluetooth Class 1 Power Amplifier OUT/VCC2 Die Pad VCC1 VCC1 4 5 VCC0 VCC0 Ground Description 07/26/2001 PA2423MB Production Information Page ...
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... P = +2dBm,T =25° 2.45GHz, CTL IN A noted. Parameter = 3.3V CC VCC0 VCC1 VCC2 CTL = 25°C A Pin CTL = 0V high ramp ctl 07/26/2001 PA2423MB Production Information Max. Unit +3 dBm °C +85 °C +150 °C +150 Min. Typ. Max. Unit 3 3.3 3.6 ...
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... GHz Bluetooth Class 1 Power Amplifier IC =3.3V 3.3V, PIN =+2 dBm, T =25°C, f =2.45 GHz, CTL A Parameter =+2 dBm 3.3V IN CTL =+2 dBm, V =0.4V IN CTL <+85° +2dBm RAMP IN =25°C. A 07/26/2001 PA2423MB Production Information Min. Typ. Max. Unit 2400 2500 MHz 21 22.7 23.5 dBm -20 0 dBm 120 dBm 0.7 1.0 ...
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... Typical Performance Characteristics Test Conditions using SiGe PA2423MB-EV: Pout vs Frequency 2.3 2.3 2.4 2.4 2.5 2.5 2.6 Frequency (GHz) Output Power, Gain vs Input Power (Frequency=2.45GHz -28 -24 -20 -16 - Pout Input Power (dBm) Gain DOC# 05PDS001 Rev 9 2.4 GHz Bluetooth Class 1 Power Amplifier IC ...
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... Pin=-4dBm Pin=+2dBm RF Output Power vs Frequency -10 -15 -20 -25 -30 2.9 3.4 -35 -40 -45 - 2.4525 07/26/2001 PA2423MB Production Information 1.4 1.9 2.4 2.9 3.4 Vctl(V) Pin=0dBm Frequency (GHz) Page ...
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... Package Dimensions The PA2423MB is packaged lead MSOP package. The underside of the package is an exposed die-pad structure. This allows for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below. DOC# 05PDS001 Rev 9 2 ...
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... RAMP tm Bluetooth 1.1. During receive mode, V block between the radio and the antenna while consuming a modest 1uA. In transmit mode, V pulled to VCC and PA2423MB offers 21dB of large signal gain. The rise and fall time are in the order of 1-2usec. Using V CTL analog pin that is designed to control the gain of PA2423MB. Applying a voltage between 0V and CTL Vcc will adjust the gain between -15dB and 21 dB ...
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... PAE of the system at all four Bluetooth CTL power levels. By applying approximately 1. CTL the PA2423MB consuming only 15mA. By implementing a resistor DAC, the V programmable outputs. DOC# 05PDS001 Rev 9 2.4 GHz Bluetooth Class 1 Power Amplifier IC , for example, a Class1 radio can be modified to a Class2 radio with ...
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... Fax: +1 613 820 4933 2680 Queensview Drive sales@sige.com United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: SiGe Semiconductor Inc. products are NOT authorized for use in 07/26/2001 PA2423MB Production Information +44 1223 598 035 Page ...