PA2423G-EV SiGe Semiconductor Inc., PA2423G-EV Datasheet - Page 2

• Manufacturer Part Number: PA2423G-EV
• Description: 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
• Manufacturer: SiGe Semiconductor Inc.

Pad Description
For reference of pad numbers to the package drawings, see pages 4 and 5.
Absolute Maximum Ratings
Operation in excess of any one of the above Absolute Maximum Ratings may result in permanent damage. This device is a
high performance RF integrated circuit with EST rating < 600V and is ESD sensitive. Handling and assembly of this device
should be at ESD protected workstations.
DOC # 05PDS003 Rev 5
Number
10
11
12
1
2
3
4
5
6
7
8
9
Symbol
V
V
T
V
RAM
TA
STG
CTL
IN
T
CC
j
OUT/VCC2
P
VRAMP
Name
GND1
GND2
GND3
GND4
GND5
VCC1
GND6
VCC0
VCTL
IN
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
PA input
PA enable/disable control input
Ground
Output power level control
Ground
Ground
PA output and stage2 collector supply voltage
Ground
Ground
Stage1 collector supply voltage
Ground
Ramp supply voltage
Parameter
Description
07/26/2001
2.4 GHz Bluetooth Class 1 Power Amplifier IC
X = 192µm ± 10µm, Y = 315µm ± 10µm
X = 192µm ± 10µm, Y = 515µm ± 10µm
X = 352µm ± 10µm, Y = 515µm ± 10µm
X = 512µm ± 10µm, Y = 515µm ± 10µm
X = 672µm ± 10µm, Y = 515µm ± 10µm
X = 832µm ± 10µm, Y = 515µm ± 10µm
X = 752µm ± 10µm, Y = 315µm ± 10µm
X = 832µm ± 10µm, Y = 115µm ± 10µm
X = 672µm ± 10µm, Y = 115µm ± 10µm
X = 512µm ± 10µm, Y = 115µm ± 10µm
X = 352µm ± 10µm, Y = 115µm ± 10µm
X = 192µm ± 10µm, Y = 115µm ± 10µm
Pad Coordinate, Center of Pad
Min.
-0.3
-0.3
-0.3
-40
-40
(lower left corner is (0.0))
Preliminary Information
Max.
+150
+150
+3.6
V
V
+85
+8
CC
CC
PA2423G
Unit
dBm
°C
°C
°C
V
V
V
Page 2