M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 26

• Manufacturer Part Number: M36DR432BD
• Description: 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
• Manufacturer: ST Microelectronics

M36DR432AD, M36DR432BD
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 14. Operating and AC Measurement Conditions
Note: 1. V
Figure 6. AC Measurement I/O Waveform
Note: V
Table 15. Device Capacitance
Note: Sampled only, not 100% tested.
26/52
V
V
V
Ambient Operating Temperature
Load Capacitance (C
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
DDF
DDS
PPF
Symbol
V DD
C
DD
C
Supply Voltage
0V
Supply Voltage
Supply Voltage
OUT
IN
DD
means V
= V
DDS
DDF
= V
Input Capacitance
Output Capacitance
Parameter
= V
DDF
(1)
L
DDS
)
Parameter
(1)
AI90206
V DD /2
Test Condition
1.65
– 40
Min
30
V
-
V
OUT
0 to V
IN
SRAM
V
DD
70
= 0V
= 0V
Conditions summarized in Table 14, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Figure 7. AC Measurement Load Circuit
Note: V
/2
DD
Max
2.2
85
5
2
-
VDD
DD
C L includes JIG capacitance
means V
0.1µF
11.4
– 40
Min
1.8
-
0 to V
V
DEVICE
UNDER
DD
85
30
DDF
TEST
Min
/2
DD
Max
12.6
C L = 50pF
= V
2.2
85
4
-
DDS
Flash
1.65
11.4
– 40
Min
-
Max
100, 120
0 to V
12
15
V
DD
30
/2
DD
Max
12.6
2.2
85
4
-
V DD
AI90207
Unit
25k
25k
pF
pF
Units
°C
pF
ns
V
V
V
V
V