M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 27

• Manufacturer Part Number: M36DR432BD
• Description: 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
• Manufacturer: ST Microelectronics

Table 16. Flash DC Characteristics
Note: 1. Sampled only, not 100% tested.
V
Symbol
I
I
CC4
CC5
PPF
I
I
I
I
I
V
PPF1
PPF2
V
V
I
V
CC1
CC2
CC3
I
LO
OH
LI
OL
IH
IL
2. V
3. For standard program/erase operation V
(2,3)
(1)
(1)
PPF
Input Leakage Current
Output Leakage Current
Supply Current
(Read Mode)
Supply Current
(Power-Down)
Supply Current (Standby)
Supply Current
(Program or Erase)
Supply Current
(Dual Bank)
V
(Program or Erase)
V
(Standby or Read)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CMOS
V
(Program or Erase)
may be connected to 12V power supply for a total of less than 100 hrs.
PPF
PPF
PPF
Supply Current
Supply Current
Supply Voltage
Parameter
Word Program, Block Erase
Program/Erase in progress
PPF
in one Bank, Read in the
EF = V
Double Word Program
V
V
RPF = V
is don’t care.
0V
EF = V
Test Condition
PPF
PPF
0V
I
OH
I
V
in progress
other Bank
OL
IL
PPF
= 12V ± 0.6V
= 12V ± 0.6V
V
6MHz
= –100µA
, GF = V
V
= 100µA
OUT
DD
IN
SS
V
± 0.2V
± 0.2V
DD
V
V
DD
IH
DD
, f =
V
V
DD
DD
–0.5
–0.4
11.4
Min
– 0.4
–0.1
M36DR432AD, M36DR432BD
Typ
100
0.2
10
10
13
3
2
2
V
V
DD
DD
Max
12.6
400
0.4
0.1
±1
±5
10
50
20
26
5
6
5
+ 0.4
+ 0.4
Unit
mA
mA
mA
mA
27/52
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V