M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 39
M36DR432BD
Manufacturer Part Number
M36DR432BD
Description
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
Manufacturer
ST Microelectronics
Datasheet
1.M36DR432BD.pdf
(52 pages)
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Figure 19. SRAM Standby AC Waveforms
Table 23. SRAM Read AC Characteristics)
Note: 1. Sampled only. Not 100% tested.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
GHQZ
PD
PU
AVQV
AXQX
BHQZ
EHQZ
GLQV
GLQX
BLQV
BLQX
ELQV
ELQX
AVAV
(1)
(1)
ES
I DD
t
t
t
t
t
t
t
OHZ
t
Alt
t
BHZ
t
t
ACE
OLZ
BLZ
t
OH
RC
AA
BA
HZ
EO
LZ
Read Cycle Time
Address Valid to Output Valid
Address Transition to Output Transition
UBS, LBS Disable to Hi-Z Output
UBS, LBS Access Time
UBS, LBS Enable to Low-Z Output
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Chip Enable Low to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
Chip Enable High to Power Down
Chip Enable Low to Power Up
tPU
Parameter
M36DR432AD, M36DR432BD
Min
70
10
5
5
5
0
SRAM
70
Max
70
25
45
25
70
25
35
70
AI07320
tPD
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
39/52
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