IS42S16100 Integrated Silicon Solution, IS42S16100 Datasheet - Page 26

• Manufacturer Part Number: IS42S16100
• Description: 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
• Manufacturer: Integrated Silicon Solution

IS42S16100
26
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (t
precharge operation starts one clock period after the last
burst data input.
CAS latency = 3, burst length = 4
CAS latency = 2, burst length = 4
COMMAND
COMMAND
DAL
CLK
CLK
I/O
I/O
WRITE WITH AUTO-PRECHARGE
WRITE WITH AUTO-PRECHARGE
) is t
RP
WRITE A0
WRITE A0
D
D
plus one CLK period. That is, the
IN
IN
(BANK 0)
(BANK 0)
0
0
D
D
IN
IN
1
1
DAL
) between the
D
D
IN
IN
2
2
D
D
IN
IN
3
3
Therefore, the selected bank can be made active after a
delay of t
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
Integrated Silicon Solution, Inc. — 1-800-379-4774
CAS Latency
PRECHARGE START
PRECHARGE START
DAL
t
DAL
t
.
t
DAL
RP
t
t
DAL
ACT 0
RP
1CLK
+t
3
RP
ISSI
1CLK
+t
2
ACT 0
RP
11/01/01
Rev. C
®