SUD50NP04-77P-T4-E3 VISHAY [Vishay Siliconix], SUD50NP04-77P-T4-E3 Datasheet - Page 9

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SUD50NP04-77P-T4-E3

Manufacturer Part Number
SUD50NP04-77P-T4-E3
Description
Complementary N- and P-Channel 40-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
- 0.1
- 0.3
100
120
0.7
0.5
0.3
0.1
10
96
72
48
24
- 50
0
0
1
0.0
0 .
0
1
- 25
Single Pulse Power, Junction-to-Case
Source-Drain Diode Forward Voltage
0.3
V
0.01
SD
T
0
J
Threshold Voltage
- Source-to-Drain Voltage (V)
= 150 °C
T
J
- Temperature (°C)
25
0.6
Time (s)
0.1
50
I
D
0.9
= 250 µA
75
T
J
100
= 25 °C
1
1.2
I
D
= 5 mA
125
New Product
150
1.5
1
0
0.12
0.09
0.06
0.03
0.01
120
100
0.1
96
72
48
24
10
0
0.01
0.001
1
0
0
Limited by r
On-Resistance vs. Gate-to-Source Voltage
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse Power, Junction-to-Ambient
GS
0.01
> minimum V
V
2
Single Pulse
0.1
DS
V
T
GS
A
DS(on)
- Drain-to-Source Voltage (V)
= 25 °C
- Gate-to-Source Voltage (V)
*
SUD50NP04-77P
0.1
4
GS
Time (s)
at which r
1
Vishay Siliconix
1
6
DS(on)
10
T
www.vishay.com
I
T
is specified
A
D
A
10
= 125 °C
= 5 A
8
= 25 °C
1 ms
10 ms
100 ms
1 s
10 s
DC
100
100
10
9

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