SUD50NP04-77P-T4-E3 VISHAY [Vishay Siliconix], SUD50NP04-77P-T4-E3 Datasheet - Page 5

• Manufacturer Part Number: SUD50NP04-77P-T4-E3
• Description: Complementary N- and P-Channel 40-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
- 0.2
- 0.4
- 0.6
- 0.8
0.001
100
0.01
0.4
0.2
0.0
100
80
60
40
20
0.1
10
0
0
- 50
1
0 .
0.0
0
01
I
D
Single Pulse Power, Junction-to-Case
= 5 mA
- 25
Source-Drain Diode Forward Voltage
0.2
0.001
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
I
T
D
0.4
J
= 250 µA
- Temperature (°C)
25
T
J
Time (s)
= 150 °C
0.01
50
0.6
75
0.8
100
0.1
T
J
= 25 °C
1.0
125
New Product
150
1.2
1
0.20
0.16
0.12
0.08
0.04
0.01
100
100
0.1
80
60
40
20
10
0
0.01
0
1
0.0001
0
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area, Junction-to-Ambient
Limited by r
Single Pulse Power, Junction-to-Ambient
* V
GS
0.001
> minimum V
V
V
2
Single Pulse
0.1
GS
T
DS
A
DS(on)
= 25 °C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
SUD50NP04-77P
*
0.01
4
GS
Time (s)
1
at which r
Vishay Siliconix
0.1
6
DS(on)
10
www.vishay.com
T
T
I
A
is specified
D
A
= 125 °C
1
= 5 A
= 25 °C
8
100 µs
1 ms
10 ms
100 ms
10 s
DC
100
10
10
5