SUD50NP04-77P-T4-E3 VISHAY [Vishay Siliconix], SUD50NP04-77P-T4-E3 Datasheet - Page 8

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SUD50NP04-77P-T4-E3

Manufacturer Part Number
SUD50NP04-77P-T4-E3
Description
Complementary N- and P-Channel 40-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
SUD50NP04-77P
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.050
0.044
0.038
0.032
0.026
0.020
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0
0
I
D
= 5 A
V
V
GS
GS
On-Resistance vs. Drain Current
0.5
6
8
V
= 4.5 V
= 10 V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
D
= 20 V
- Drain Current (A)
Gate Charge
1.0
12
16
V
DS
V
= 10 V
GS
1.5
18
24
= 10 thru 4 V
V
DS
= 30 V
2.0
32
24
3 V
New Product
2.5
30
40
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
I
D
rss
C
= 5 A
- 25
oss
T
0.8
J
6
V
V
= 125 °C
T
Transfer Characteristics
DS
GS
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
T
J
25
Capacitance
1.6
12
= 25 °C
C
50
iss
S-80109-Rev. B, 21-Jan-08
Document Number: 73989
2.4
18
V
75
GS
= 10 V
T
100
V
J
GS
= - 55 °C
3.2
24
= 4.5 V
125
4.0
30
150

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