SUD50NP04-77P-T4-E3 VISHAY [Vishay Siliconix], SUD50NP04-77P-T4-E3 Datasheet - Page 6

• Manufacturer Part Number: SUD50NP04-77P-T4-E3
• Description: Complementary N- and P-Channel 40-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.01
100
15
12
15
12
0.1
10
9
6
3
0
9
6
3
0
0.01
1
0
0
Limited by r
* V
Safe Operating Area, Junction-to-Case
Current Derating**, Junction-to-Case
Package Limited
GS
25
25
Power Derating, Junction-to-Case
> minimum V
V
Single Pulse
0.1
T
DS
DS(on)
C
T
T
C
= 25 °C
- Drain-to-Source Voltage (V)
C
- Case Temperature (°C)
50
50
- Case Temperature (°C)
*
GS
at which r
1
75
75
DS(on)
100
100
10
is specified
125
125
100 µs
1 ms
10 ms
100 ms, DC
150
150
100
New Product
** The power dissipation P
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
2.5
2.0
1.5
1.0
0.5
0.0
7
5
4
3
1
0
0
0
Current Derating**, Junction-to-Ambient
Power Derating, Junction-to-Ambient
25
25
T
T
A
A
- Ambient Temperature (°C)
- Ambient Temperature (°C)
D
50
50
is based on T
75
75
S-80109-Rev. B, 21-Jan-08
Document Number: 73989
100
100
J(max)
= 150 °C, using
125
125
150
150