SIHB24N65E VISHAY [Vishay Siliconix], SIHB24N65E Datasheet - Page 7

• Manufacturer Part Number: SIHB24N65E
• Description: E Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
outmost extremes of the plastic body at datum A.
DIM.
A1
b1
b2
b3
c1
c2
A
D
b
c
4
(Datum A)
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
L1
L2
D
MILLIMETERS
B
B
2 x e
Lead tip
1
3
B
B
MAX.
4
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
E
2
C
4
3
C
2 x b
2 x b2
0.010
A
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
H
MIN.
5
M
INCHES
A
Plating
M
(c)
B
Section B - B and C - C
Detail A
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
Scale: none
b1, b3
(b, b2)
5
± 0.004
c
A
c1
c2
Base
metal
M
B
5
B
A
A
DIM.
D1
E1
L1
L2
L3
L4
H
E
e
L
0° to 8°
L3
Gauge
plane
14.61
MIN.
6.86
9.65
6.22
1.78
4.78
MILLIMETERS
-
-
Package Information
2.54 BSC
0.25 BSC
Rotated 90° CW
L
View A - A
scale 8:1
Detail “A”
L4
E1
E
MAX.
10.67
15.88
2.79
1.65
1.78
5.28
-
-
D1
Vishay Siliconix
4
H
A1
4
0.270
0.380
0.245
0.575
0.070
0.188
MIN.
B
-
-
0.100 BSC
0.010 BSC
Seating plane
INCHES
www.vishay.com
MAX.
0.420
0.625
0.110
0.066
0.070
0.208
-
-
1