SIHB24N65E VISHAY [Vishay Siliconix], SIHB24N65E Datasheet - Page 3

• Manufacturer Part Number: SIHB24N65E
• Description: E Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S11-2088 Rev. B, 31-Oct-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
Fig. 3 - Typical Transfer Characteristics
TOP 15 V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T
TOP
J
= 150 °C
14 V
13 V
12 V
11 V
10 V
V
V
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15 V
14 V
13 V
12 V
5
5
DS
V
DS
5
DS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
10
= 25 °C
10
T
J
= 25 °C
15
15
15
T
20
20
J
10 V
5 V
= 150 °C
11 V
9 V
9 V
8 V
5 V
20
25
25
25
30
30
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
Fig. 4 - Normalized On-Resistance vs. Temperature
100
2.5
1.5
0.5
10
24
20
16
12
3
2
1
0
1
8
4
0
- 60 - 40 - 20 0
0
0
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I
D
= 24 A
100
V
C
DS
T
30
rss
Q
J
, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
C
g
C
, Total Gate Charge (nC)
oss
iss
200
20 40 60 80 100 120 140 160
60
V
C
C
C
GS
iss
rss
oss
300
= 0 V, f = 1 MHz
= C
= C
= C
V
gs
GS
gd
90
ds
V
V
V
+ C
+ C
= 10 V
400
DS
DS
DS
Vishay Siliconix
SiHB24N65E
Document Number: 91477
gd
= 520 V
= 335 V
= 130 V
gd
, C
120
ds
500
Shorted
600
150