SIHB24N65E VISHAY [Vishay Siliconix], SIHB24N65E Datasheet - Page 2

• Manufacturer Part Number: SIHB24N65E
• Description: E Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
S11-2088 Rev. B, 31-Oct-11
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
DS
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Temperature Coefficient
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
R
R
t
t
I
I
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
SM
t
thJA
thJC
I
t
t
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
g
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
Reference to 25 °C, I
DS
T
= 10 V
= 10 V
J
2
= 520 V, V
dI/dt = 100 A/μs, V
= 25 °C, I
T
TYP.
V
V
V
V
J
V
TEST CONDITIONS
f = 1 MHz, open drain
DS
DD
DS
GS
-
-
GS
= 25 °C, I
V
DS
= V
= 650 V, V
= 520 V, I
= 10 V, R
= 0 V, I
V
V
V
GS
= 8 V, I
DS
f = 1 MHz
GS
GS
S
GS
I
D
= ± 20 V
= 100 V,
= 24 A, V
, I
= 0 V,
= 24 A, V
F
= 0 V, T
D
D
= I
= 250 μA
D
= 250 μA
g
D
www.vishay.com/doc?91000
GS
I
S
= 5 A
= 9.1 
D
= 24 A,
D
R
= 24 A,
= 12 A
= 250 μA
= 0 V
= 20 V
J
GS
G
DS
= 125 °C
= 0 V
= 520 V
MAX.
0.5
D
S
62
MIN.
650
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Siliconix
SiHB24N65E
Document Number: 91477
0.120
TYP.
2740
0.72
0.68
122
517
7.1
9.7
81
21
37
24
84
70
69
30
4
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.145
122
126
105
104
1.2
10
48
24
96
4
1
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nA
μA
nC
μC
pF
ns
ns


V
V
S
A
V
A