SIHB24N65E VISHAY [Vishay Siliconix], SIHB24N65E Datasheet - Page 4

• Manufacturer Part Number: SIHB24N65E
• Description: E Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

S11-2088 Rev. B, 31-Oct-11
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
100
100
0.1
10
0.1
10
1
1
0.2
1
* V
Fig. 8 - Maximum Safe Operating Area
Limited by R
T
T
Single Pulse
0.01
GS
C
J
0.1
T
= 150 °C
= 25 °C
1
0.4
J
> minimum V
0.0001
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= 150 °C
V
Operation in this area
limited by R
V
SD
DS
0.02
0.2
, Source-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
DS(on)
0.05
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Duty Cycle = 0.5
0.1
10
BVDSS Limited
*
GS
DS(on)
0.8
at which R
Single Pulse
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
T
J
1.0
= 25 °C
100
DS(on)
1.2
0.001
V
100 μs
10 ms
1 ms
GS
is specified
= 0 V
1.4
1000
1.6
Pulse Time (s)
0.01
4
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
825
800
775
750
725
700
675
650
25
20
15
10
5
0
- 60
25
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- 40 - 20
T
50
0.1
J
T
, Junction Temperature (°C)
J
0
, Case Temperature (°C)
20 40 60 80 100 120 140
75
100
Vishay Siliconix
SiHB24N65E
Document Number: 91477
125
1
160
150