COP8SBR9 NSC [National Semiconductor], COP8SBR9 Datasheet - Page 15

• Manufacturer Part Number: COP8SBR9
• Description: 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
• Manufacturer: NSC [National Semiconductor]

Dual Clock Mode
Low Speed Mode
Supply Current for BOR Feature
High Brownout Trip Level (BOR Enabled)
Input Levels (V
Internal Bias Resistor for the CKI
Crystal/Resonator Oscillator
Hi-Z Input Leakage
Input Pullup Current
Port Input Hysteresis
Output Current Levels
D Outputs
All Others
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM(Note *NO TARGET FOR FNXref NS20196*)
G6 Rise Time to Force Execution from Boot ROM
Input Current on G6 when Input
8.0 Electrical Characteristics
DC Electrical Characteristics (−40˚C ≤ T
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
AC Electrical Characteristics (−40˚C ≤ T
Instruction Cycle Time (t
Output Propagation Delay
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
MICROWIRE/PLUS Hold Time (t
MICROWIRE/PLUS Output Propagation
Delay (t
Input Pulse Width
CKI = 10 MHz, Low Speed OSC = 32 kHz
Low Speed OSC = 32 kHz
Logic High
Logic Low
Source
Sink (Note 7)
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Crystal/Resonator
Interrupt Input High Time
UPD
)
IH
, V
Parameter
Parameter
IL
)
C
R
)
(in HALT Mode)
>
UWH
V
UWS
CC
)
)
4.5V ≤ V
R
L
=2.2k, C
(Continued)
V
V
V
V
V
V
V
V
V
V
V
G6 rise time must be slower than
100 ns
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IN
Conditions
= 11V, V
= 5.5V, t
= 5.5V
= 5.5V
= 5.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 5.5V
= 5.5V
CC
L
≤ 5.5V
= 100 pF
Conditions
15
CC
C
IN
OH
OL
OH
OH
OL
= 0.5 µs
A
= 5.5V
A
= 0V
= 1.0V
= 1.0V
= 3.8V
= 3.8V
= 3.8V
≤ +125˚C)
≤ +125˚C)
Min
0.5
20
20
1
0.25 V
(Continued)
0.8 V
2 x V
4.17
−6.3
−6.3
Min
−40
100
0.3
2.0
−3
−9
−3
9
9
Typ
CC
CC
CC
30
4.28
Typ
500
1.0
Max
150
DC
2
0.16 V
V
±
CC
−250
1000
Max
2.7
4.5
2.5
70
45
+3
+3
200
1
7
+ 7
CC
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Units
MHz
µs
ns
ns
ns
t
Units
C
MΩ
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
pF
pF
nS
µA
V
V
V
V
V
V