MCF5329DS ANALOGICTECH [Advanced Analogic Technologies], MCF5329DS Datasheet - Page 16

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MCF5329DS

Manufacturer Part Number
MCF5329DS
Description
MCF5329 ColdFire Microprocessor Data Sheet
Manufacturer
ANALOGICTECH [Advanced Analogic Technologies]
Datasheet
Preliminary Electrical Characteristics
5.2
The average chip-junction temperature (T
Where:
16
T
Q
P
P
P
NOTES:
1
2
3
4
5
Junction to ambient, natural convection
Junction to ambient (@200 ft/min)
Junction to board
Junction to case
Junction to top of package
Maximum operating junction temperature
A
JMA
D
INT
I/O
θ
Freescale recommends the use of θ
device junction temperatures from exceeding the rated specification. System designers should be aware
that device junction temperatures can be significantly influenced by board layout and surrounding devices.
Conformance to the device junction temperature specification can be verified by physical measurement in
the customer’s system using the Ψ
EIA/JESD Standard 51-2.
Per JEDEC JESD51-6 with the board horizontal.
Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8.
Board temperature is measured on the top surface of the board near the package.
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL
SPEC-883 Method 1012.1).
Thermal characterization parameter indicating the temperature difference between package top and the
junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal
characterization parameter is written in conformance with Psi-JT.
Thermal Characteristics
JMA
5
and Ψ
Power supply must maintain regulation within operating EV
and operating maximum current conditions. If positive injection current (V
than I
going out of regulation. Insure external EV
injection current. This will be the greatest risk when the MCU is not consuming power (ex; no
clock). Power supply must maintain regulation within operating EV
instantaneous and operating maximum current conditions.
= Ambient Temperature, °C
= Package Thermal Resistance, Junction-to-Ambient, °C/W
= P
= I
= Power Dissipation on Input and Output Pins — User Determined
jt
DD
INT
DD
parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection.
, the injection current may flow out of EV
× IV
+ P
Characteristic
I/O
DD
MCF5329 ColdFire
, Watts - Chip Internal Power
Table 5. Thermal Characteristics
jt
JmA
parameter, the device power dissipation, and the method described in
T
J
J
and power dissipation specifications in the system design to prevent
) in °C can be obtained from:
=
Four layer board
(2s2p)
Four layer board
(2s2p)
®
T
Microprocessor Data Sheet, Rev. 0.1
A
+
Preliminary
(
P
DD
D
×
load will shunt current greater than maximum
Θ
DD
JMA
and could result in external power supply
)
Symbol
θ
θ
θ
θ
Ψ
JMA
JMA
T
JB
JC
jt
j
DD
range during instantaneous
DD
256MBGA
range during
26
23
2
105
15
10
1,5
1,2
in
1,2
3
4
> EV
DD
196MBGA
) is greater
Freescale Semiconductor
32
29
2
105
20
10
1,5
1,2
1,2
3
4
°C / W
°C / W
°C / W
°C / W
°C / W
Unit
o
C
Eqn. 1

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