CY14B101LA CYPRESS [Cypress Semiconductor], CY14B101LA Datasheet - Page 9

• Manufacturer Part Number: CY14B101LA
• Description: 1 Mbit (128K x 8/64K x 16) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Data Retention and Endurance
Capacitance
Thermal Resistance
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%) ........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
Document #: 001-42879 Rev. *C
DATA
NV
C
C
13. These parameters are guaranteed by design and are not tested.
Parameter
Parameter
IN
OUT
C
Parameter
R
OUTPUT
Θ
Θ
JA
JC
[13]
[13]
3.0V
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Output Capacitance
Data Retention
Nonvolatile STORE Operations
30 pF
Description
Description
577Ω
R1
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
in accordance with EIA/JESD51.
T
V
A
CC
= 25°C, f = 1 MHz,
= V
Test Conditions
PRELIMINARY
CC
Description
789Ω
Figure 5. AC Test Loads
(Typ)
R2
Test Conditions
OUTPUT
3.0V
54-TSOP II 48-SSOP 44-TSOP II
30.73
6.08
5 pF
CY14B101LA, CY14B101NA
TBD
TBD
577Ω
R1
31.11
5.56
Max
Min
200
20
7
7
for tristate specs
789Ω
32-SOIC
R2
TBD
TBD
Page 9 of 24
Years
Unit
Unit
pF
pF
K
°C/W
°C/W
Unit
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