NAND01G-B STMICROELECTRONICS [STMicroelectronics], NAND01G-B Datasheet - Page 56

• Manufacturer Part Number: NAND01G-B
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

DC And AC parameters
Figure 31. Block Erase AC Waveform
1. Address cycle 3 is required for 2Gb devices only.
Figure 32. Reset AC Waveform
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RB
I/O
AL
CL
W
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
D0h
Code
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
NAND01G-B, NAND02G-B
SR0
ai08043
ai08038b