M28W640FCT STMICROELECTRONICS [STMicroelectronics], M28W640FCT Datasheet - Page 40

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M28W640FCT

Manufacturer Part Number
M28W640FCT
Description
64 Mbit (4Mb x16, Boot Block) 3V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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M28W640FCT, M28W640FCB
Table 28. CFI Query System Interface Information
40/55
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C6h
00B4h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
V
V
V
V
Typical time-out per single word program = 2
Typical time-out for Double/Quadruple Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for Word program = 2
Maximum time-out for Double/Quadruple Word Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Description
n
n
times typical
ms
n
times typical
n
n
µs
ms
n
times typical
n
µs
n
times typical
512µs
512µs
Value
12.6V
11.4V
16µs
16µs
2.7V
3.6V
NA
NA
1s
8s

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